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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1958 DESCRIPTION *With TO-220F package *Low collector saturation voltage APPLICATIONS *TV horizontal deflection output *High-current switching applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 200 60 6 4.5 10 30 150 -55~150 UNIT V V V A A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT tf PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Fall time CONDITIONS IC=5mA; IE=0 IC=5mA; RBE= IE=5mA; IC=0 IC=4A ; IB=0.4A IC=4A ; IB=0.4A VCB=40V;IE=0 VEB=5V;IC=0 IC=1A ; VCE=5V IC=4A ; VCE=5V IC=1A ; VCE=5V VCC=50V;IC=5A;IB1=-IB2=500mA 30 25 10 0.2 MIN 200 60 6 0.5 2SD1958 TYP. MAX UNIT V V V 1.0 1.5 0.1 0.1 160 V V mA mA MHz 0.5 s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1958 Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1958 4 |
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